NSS30201MR6 Series

30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor

Catalog

30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor

Part	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Transistor Type	Mounting Type	Power - Max [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]
ON Semiconductor NSS30201MR6T1G	75 mV	2 A	300 MHz	300 hFE	30 V	-55 °C	150 °C	SOT-23-6 Thin TSOT-23-6	NPN	Surface Mount	535 mW	6-TSOP	100 nA

Catalog

30 V, 2.0 A NPN Low VCE(sat) Bipolar Junction Transistor

Key Features

• High Current Gain

• High Current

• Low VCE(sat)

• S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

• High Cut Off Frequency

• Low Profile Package

• Linear Gain (Beta)

Description

This 30 V, 2.0 A NPN Low VCE(sat)Bipolar Junction Transistor is a miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.