Discrete Semiconductor Products
LSIC2SD065A10A
ObsoleteLITTELFUSE
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 27 A, 30 NC, TO-220
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Discrete Semiconductor Products
LSIC2SD065A10A
ObsoleteLITTELFUSE
SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 27 A, 30 NC, TO-220
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | LSIC2SD065A10A |
|---|---|
| Capacitance @ Vr, F | 470 pF |
| Current - Average Rectified (Io) | 27 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | TO-220-2L |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
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Description
General part information
LSIC2SD065A10A Series
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.
Documents
Technical documentation and resources