LSIC2SD065A10A Series

650V/10A SiC SBD TO220-2L AEC-Q101

Catalog

650V/10A SiC SBD TO220-2L AEC-Q101

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Reverse Recovery Time (trr)	Package / Case	Supplier Device Package	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr
LITTELFUSE LSIC2SD065A10A	175 ░C	-55 °C	0 ns	TO-220-2	TO-220-2L	27 A	650 V	SiC (Silicon Carbide) Schottky	Through Hole	500 mA	1.8 V	470 pF	50 µA

Catalog

650V/10A SiC SBD TO220-2L AEC-Q101

Description

This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired.