Discrete Semiconductor Products

SI1021R-T1-GE3

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MOSFET P-CH 60V 190MA SC75A

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Discrete Semiconductor Products

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MOSFET P-CH 60V 190MA SC75A

Technical Specifications

Parameters and characteristics for this part

Specification	SI1021R-T1-GE3

Current - Continuous Drain (Id) @ 25°C	190 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.7 nC
Input Capacitance (Ciss) (Max) @ Vds	23 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max) [Max]	250 mW
Rds On (Max) @ Id, Vgs [Max]	4 Ohm
Supplier Device Package	SC-75A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI1021R-T1-E3	1.7 nC	4 Ohm	MOSFET (Metal Oxide)	23 pF	4.5 V 10 V	-55 °C	150 °C	3 V	Surface Mount	SC-75A	SC-75 SOT-416	20 V	250 mW	60 V	P-Channel	190 mA
Vishay General Semiconductor - Diodes Division SI1021R-T1-GE3	1.7 nC	4 Ohm	MOSFET (Metal Oxide)	23 pF	4.5 V 10 V	-55 °C	150 °C	3 V	Surface Mount	SC-75A	SC-75 SOT-416	20 V	250 mW	60 V	P-Channel	190 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 60 V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A

Technical documentation and resources