SI1021 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 60V 190MA SC75A
| Part | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs [Max] | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Mounting Type | Supplier Device Package | Package / Case | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | FET Type | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 1.7 nC | 4 Ohm | MOSFET (Metal Oxide) | 23 pF | 4.5 V 10 V | -55 °C | 150 °C | 3 V | Surface Mount | SC-75A | SC-75 SOT-416 | 20 V | 250 mW | 60 V | P-Channel | 190 mA |
Vishay General Semiconductor - Diodes Division | 1.7 nC | 4 Ohm | MOSFET (Metal Oxide) | 23 pF | 4.5 V 10 V | -55 °C | 150 °C | 3 V | Surface Mount | SC-75A | SC-75 SOT-416 | 20 V | 250 mW | 60 V | P-Channel | 190 mA |