Discrete Semiconductor Products
STGD10HF60KD
ActiveSTMicroelectronics
IGBTS AUTOMOTIVE-GRADE 10 A, 600 V SHORT-CIRCUIT RUGGED IGBT ULTRAFAST DIODE
Discrete Semiconductor Products
STGD10HF60KD
ActiveSTMicroelectronics
IGBTS AUTOMOTIVE-GRADE 10 A, 600 V SHORT-CIRCUIT RUGGED IGBT ULTRAFAST DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STGD10HF60KD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 18 A |
| Current - Collector Pulsed (Icm) | 30 A |
| Gate Charge | 23 nC |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 62.5 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 50 ns |
| Supplier Device Package | DPAK |
| Switching Energy | 105 µJ, 45 µJ |
| Td (on/off) @ 25°C [custom] | 87 ns |
| Td (on/off) @ 25°C [custom] | 9.5 ns |
| Test Condition | 15 V, 5 A, 400 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGD10HF60KD Series
This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications operating at high frequencies.