Discrete Semiconductor Products
STD6N60DM2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.95 OHM TYP., 5 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE
Discrete Semiconductor Products
STD6N60DM2
ActiveSTMicroelectronics
N-CHANNEL 600 V, 0.95 OHM TYP., 5 A MDMESH DM2 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD6N60DM2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 6.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 274 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm |
| Supplier Device Package | TO-252 (DPAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD6N60DM2 Series
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Documents
Technical documentation and resources
