Specification	KSP42BU

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Frequency - Transition	50 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	300 V

KSP42 Series

NPN Epitaxial Silicon Transistor

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max)	Frequency - Transition	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature	Power - Max [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor KSP42BU	TO-226-3 TO-92-3	500 mA	300 V	50 MHz	Through Hole	40	150 °C	625 mW	TO-92-3	100 nA	NPN	500 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources