Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Emitter Voltage : VCEO= KSP42: 300V
• Collector-Emitter Voltage : VCEO= KSP43: 200V
• Collector Dissipation : PC= 625mW Amplifier Transistor
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NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Package / Case | Current - Collector (Ic) (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) | Frequency - Transition | Mounting Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature | Power - Max [Max] | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | Transistor Type | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | TO-226-3 TO-92-3 | 500 mA | 300 V | 50 MHz | Through Hole | 40 | 150 °C | 625 mW | TO-92-3 | 100 nA | NPN | 500 mV |