CSD17484F4T
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 128 MOHM, GATE ESD PROTECTION
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CSD17484F4T
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE LGA 1 MM X 0.6MM, 128 MOHM, GATE ESD PROTECTION
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD17484F4T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8 V, 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 2.04 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 195 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-XFDFN |
| Power Dissipation (Max) [Max] | 500 mW |
| Rds On (Max) @ Id, Vgs [Max] | 121 mOhm |
| Supplier Device Package | 3-PICOSTAR |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 12 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.60 | |
| 10 | $ 0.49 | |||
| 100 | $ 0.38 | |||
| Digi-Reel® | 1 | $ 0.60 | ||
| 10 | $ 0.49 | |||
| 100 | $ 0.38 | |||
| Tape & Reel (TR) | 250 | $ 0.38 | ||
| 500 | $ 0.32 | |||
| 1250 | $ 0.32 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.79 | |
| 100 | $ 0.51 | |||
| 250 | $ 0.39 | |||
| 1000 | $ 0.26 | |||
Description
General part information
CSD17484F4 Series
This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
This 99-mΩ, 30-V, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Documents
Technical documentation and resources