Discrete Semiconductor Products

APT68GA60B

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IGBT PT 600V 121A TO247

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Discrete Semiconductor Products

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IGBT PT 600V 121A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT68GA60B

Current - Collector (Ic) (Max) [Max]	121 A
Current - Collector Pulsed (Icm)	202 A
Gate Charge	298 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	520 W
Supplier Device Package	TO-247 [B]
Switching Energy	607 µJ, 715 µJ
Td (on/off) @ 25°C	21 ns, 133 ns
Test Condition	15 V, 4.7 Ohm, 40 A, 400 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	Gate Charge	IGBT Type	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vce(on) (Max) @ Vge, Ic	Test Condition	Switching Energy	Td (on/off) @ 25°C	Power - Max [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector Pulsed (Icm)
Microchip Technology APT68GA60B	298 nC	PT	121 A	TO-247 [B]	-55 °C	150 °C	Through Hole	2.5 V	4.7 Ohm 15 V 40 A 400 V	607 µJ 715 µJ	21 ns 133 ns	520 W	TO-247-3	600 V	202 A
Microchip Technology APT68GA60B2D40	198 nC	PT	121 A		-55 °C	150 °C	Through Hole	2.5 V	4.7 Ohm 15 V 40 A 400 V	607 µJ 715 µJ	21 ns 133 ns	520 W	TO-247-3 Variant	600 V	202 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 600 V 121 A 520 W Through Hole TO-247 [B]

Technical documentation and resources