Specification	NTB75N03RT4G

Current - Continuous Drain (Id) @ 25°C	9.7 A, 75 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.2 nC
Input Capacitance (Ciss) (Max) @ Vds	1333 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	74.4 W, 1.25 W
Rds On (Max) @ Id, Vgs	8 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NTB75N03-06 Series

Power MOSFET 30V 75A 8 mOhm Single N-Channel D2PAK Logic Level

Part	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTB75N06LT4G	2 V	Surface Mount	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	75 A	MOSFET (Metal Oxide)	4370 pF	11 mOhm	92 nC	-55 °C	175 ░C	N-Channel	D2PAK	2.4 W 214 W	20 V
ON Semiconductor NTB75N06LT4	2 V	Surface Mount	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	75 A	MOSFET (Metal Oxide)	4370 pF	11 mOhm	92 nC	-55 °C	175 ░C	N-Channel	D2PAK	2.4 W 214 W	20 V
ON Semiconductor NTB75N03-6G	2 V	Surface Mount	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	75 A	MOSFET (Metal Oxide)	5635 pF	6.5 mOhm		-55 °C	150 °C	N-Channel	D2PAK	2.5 W 125 W	20 V	75 nC
ON Semiconductor NTB75N03RT4G	2 V	Surface Mount	25 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4.5 V 10 V	9.7 A 75 A	MOSFET (Metal Oxide)		8 mOhm	13.2 nC	-55 °C	150 °C	N-Channel	D2PAK	1.25 W 74.4 W	20 V		1333 pF
ON Semiconductor NTB75N03L09T4G	2 V	Surface Mount	30 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5 V	75 A	MOSFET (Metal Oxide)	5635 pF	8 mOhm		-55 °C	150 °C	N-Channel	D2PAK	2.5 W 125 W	20 V	75 nC
ON Semiconductor NTB75N06T4G	4 V	Surface Mount	60 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 V	75 A	MOSFET (Metal Oxide)		9.5 mOhm	130 nC	-55 °C	175 ░C	N-Channel	D2PAK	2.4 W 214 W	20 V		4510 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTB75N03-06 Series

This 20 VGSgate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The drain-to-source diode has a ideal fast but soft recovery.