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Technical Specifications
Parameters and characteristics for this part
| Specification | NTB75N06LT4G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 92 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 2.4 W, 214 W |
| Rds On (Max) @ Id, Vgs | 11 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
NTB75N03-06 Series
Power MOSFET 30V 75A 8 mOhm Single N-Channel D2PAK Logic Level
| Part | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 2 V | Surface Mount | 60 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5 V | 75 A | MOSFET (Metal Oxide) | 4370 pF | 11 mOhm | 92 nC | -55 °C | 175 ░C | N-Channel | D2PAK | 2.4 W 214 W | 20 V | ||
ON Semiconductor | 2 V | Surface Mount | 60 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5 V | 75 A | MOSFET (Metal Oxide) | 4370 pF | 11 mOhm | 92 nC | -55 °C | 175 ░C | N-Channel | D2PAK | 2.4 W 214 W | 20 V | ||
ON Semiconductor | 2 V | Surface Mount | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 75 A | MOSFET (Metal Oxide) | 5635 pF | 6.5 mOhm | -55 °C | 150 °C | N-Channel | D2PAK | 2.5 W 125 W | 20 V | 75 nC | ||
ON Semiconductor | 2 V | Surface Mount | 25 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4.5 V 10 V | 9.7 A 75 A | MOSFET (Metal Oxide) | 8 mOhm | 13.2 nC | -55 °C | 150 °C | N-Channel | D2PAK | 1.25 W 74.4 W | 20 V | 1333 pF | ||
ON Semiconductor | 2 V | Surface Mount | 30 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 5 V | 75 A | MOSFET (Metal Oxide) | 5635 pF | 8 mOhm | -55 °C | 150 °C | N-Channel | D2PAK | 2.5 W 125 W | 20 V | 75 nC | ||
ON Semiconductor | 4 V | Surface Mount | 60 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 10 V | 75 A | MOSFET (Metal Oxide) | 9.5 mOhm | 130 nC | -55 °C | 175 ░C | N-Channel | D2PAK | 2.4 W 214 W | 20 V | 4510 pF |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NTB75N03-06 Series
This 20 VGSgate drive vertical Power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. This power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The drain-to-source diode has a ideal fast but soft recovery.
Documents
Technical documentation and resources
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