STB16NF06LT4
ActiveN-CHANNEL 60 V, 0.07 OHM TYP., 16 A STRIPFET II POWER MOSFET IN D2PAK PACKAGE
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STB16NF06LT4
ActiveN-CHANNEL 60 V, 0.07 OHM TYP., 16 A STRIPFET II POWER MOSFET IN D2PAK PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STB16NF06LT4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 345 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 45 W |
| Rds On (Max) @ Id, Vgs | 90 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4383 | $ 1.91 | |
Description
General part information
STB16NF06L Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources