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TO-252-3
Discrete Semiconductor Products

TK30S06K3L(T6L1,NQ

Obsolete
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 30A DPAK

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TO-252-3
Discrete Semiconductor Products

TK30S06K3L(T6L1,NQ

Obsolete
Toshiba Semiconductor and Storage

MOSFET N-CH 60V 30A DPAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationTK30S06K3L(T6L1,NQ
Current - Continuous Drain (Id) @ 25°C30 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs28 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1350 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseTO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)58 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs18 Ohm
Supplier Device PackageDPAK+
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.00

Description

General part information

TK30S06 Series

N-Channel 60 V 30A (Tc) 58W (Tc) Surface Mount DPAK+

Documents

Technical documentation and resources