TK30S06 Series
Manufacturer: Toshiba Semiconductor and Storage
MOSFET N-CH 60V 30A DPAK
| Part | Power Dissipation (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Grade | Technology | Operating Temperature | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 58 W | N-Channel | 28 nC | 30 A | 60 V | 20 V | 1350 pF | 3 V | Surface Mount | 6 V 10 V | Automotive | MOSFET (Metal Oxide) | 175 °C | DPAK+ | 18 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | AEC-Q101 |