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TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

NTB35N15T4G

Obsolete

ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 150V, 37A, 50 MΩ

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-418B-04-D2PAK 3 +1

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Discrete Semiconductor Products

NTB35N15T4G

Obsolete

ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 150V, 37A, 50 MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-418B-04-D2PAK 3 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTB35N15T4G

Current - Continuous Drain (Id) @ 25°C	37 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds	3200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	178 W, 2 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTB35N15 Series

N-Channel Enhancement-Mode D2PAK

Documents

Technical documentation and resources

Datasheet

Package Drawing-418B-04-D2PAK 3

Package Drawing

Datasheet

NTB35N15 Series

Single N-Channel Power MOSFET 150V, 37A, 50 mΩ

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type
ON Semiconductor NTB35N15G	50 mOhm	2 W 178 W	N-Channel	4 V	20 V	3200 pF	MOSFET (Metal Oxide)	100 nC	-55 °C	150 °C	37 A	D2PAK	10 V	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount
ON Semiconductor NTB35N15T4G	50 mOhm	2 W 178 W	N-Channel	4 V	20 V	3200 pF	MOSFET (Metal Oxide)	100 nC	-55 °C	150 °C	37 A	D2PAK	10 V	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount