NTB35N15 Series

Single N-Channel Power MOSFET 150V, 37A, 50 mΩ

Catalog

Single N-Channel Power MOSFET 150V, 37A, 50 mΩ

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	FET Type	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type
ON Semiconductor NTB35N15G	50 mOhm	2 W 178 W	N-Channel	4 V	20 V	3200 pF	MOSFET (Metal Oxide)	100 nC	-55 °C	150 °C	37 A	D2PAK	10 V	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount
ON Semiconductor NTB35N15T4G	50 mOhm	2 W 178 W	N-Channel	4 V	20 V	3200 pF	MOSFET (Metal Oxide)	100 nC	-55 °C	150 °C	37 A	D2PAK	10 V	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount

Single N-Channel Power MOSFET 150V, 37A, 50 mΩ

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Avalanche Energy Specified

• IDSSand RDS (on)Specified at elevated temperature

• Mounting information provided for the D2PAK package

N-Channel Enhancement-Mode D2PAK