Zenode.ai Logo
Beta
SOT-223-4
Discrete Semiconductor Products

HUFA75307T3ST

Obsolete
ON Semiconductor

N-CHANNEL ULTRAFET POWER MOSFET 55V, 2.6A, 90MΩ

Deep-Dive with AI

Search across all available documentation for this part.

SOT-223-4
Discrete Semiconductor Products

HUFA75307T3ST

Obsolete
ON Semiconductor

N-CHANNEL ULTRAFET POWER MOSFET 55V, 2.6A, 90MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationHUFA75307T3ST
Current - Continuous Drain (Id) @ 25°C2.6 A
Drain to Source Voltage (Vdss)55 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds250 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-261AA, TO-261-4
Power Dissipation (Max)1.1 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs90 mOhm
Supplier Device PackageSOT-223-4
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

HUFA75307T3ST Series

This N-Channel power MOSFET is manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drives, low-voltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75307.