HUFA75307T3ST Series

N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ

Catalog

N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ

Part	Supplier Device Package	FET Type	Mounting Type	Grade	Vgs (Max)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Qualification	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Package / Case
ON Semiconductor HUFA75307T3ST	SOT-223-4	N-Channel	Surface Mount	Automotive	20 V	55 V	MOSFET (Metal Oxide)	-55 °C	150 °C	250 pF	2.6 A	4 V	90 mOhm	AEC-Q101	17 nC	10 V	1.1 W	TO-261-4 TO-261AA

Catalog

N-Channel UltraFET Power MOSFET 55V, 2.6A, 90mΩ

Key Features

• 2.6A, 55V

• Ultra On-Resistance, rDS(ON)= 0.090Ω

• Diode Exhibits Both High Speed and Soft Recovery

• Temperature Compensated PSPICE®Model

• Thermal Impedance SPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Related Literature- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

Description

This N-Channel power MOSFET is manufactured using the innovative UltraFET®process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drives, relay drives, low-voltage bus switches, and power management in portable and battery-operated products.Formerly developmental type TA75307.