Specification	BD810G

DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	15 hFE
Frequency - Transition	1.5 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	90 W
Supplier Device Package	TO-220
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

BD810 Series

High Power PNP BipolarTransistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]
ON Semiconductor BD810	-55 °C	150 °C	TO-220	Through Hole	80 V	1.5 MHz	15 hFE	PNP	1.1 V	TO-220-3	90 W
ON Semiconductor BD810G	-55 °C	150 °C	TO-220	Through Hole	80 V	1.5 MHz	15 hFE	PNP	1.1 V	TO-220-3	90 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BD810 Series

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.

Documents

Technical documentation and resources

Datasheet

Package Drawing-221A-TO-220-3 10.10x15.12x4.45, 2.54P

Package Drawing