BD810 Series

High Power PNP BipolarTransistor

Catalog

High Power PNP BipolarTransistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Package / Case	Power - Max [Max]
ON Semiconductor BD810	-55 °C	150 °C	TO-220	Through Hole	80 V	1.5 MHz	15 hFE	PNP	1.1 V	TO-220-3	90 W
ON Semiconductor BD810G	-55 °C	150 °C	TO-220	Through Hole	80 V	1.5 MHz	15 hFE	PNP	1.1 V	TO-220-3	90 W

Catalog

High Power PNP BipolarTransistor

Key Features

• DC Current Gain - hFE= 30 (Min) @ IC= 2.0 Adc

• Pb-Free Packages are Available

Description

The High Power NPN Bipolar Power Transistor is designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.