Zenode.ai Logo
Beta
T-MAX Pkg
Discrete Semiconductor Products

APT22F120B2

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 1200V, 0.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Deep-Dive with AI

Search across all available documentation for this part.

T-MAX Pkg
Discrete Semiconductor Products

APT22F120B2

Active
Microchip Technology

POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 1200V, 0.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationAPT22F120B2
Current - Continuous Drain (Id) @ 25°C23 A
Drain to Source Voltage (Vdss)1200 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs260 nC
Input Capacitance (Ciss) (Max) @ Vds8370 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3 Variant
Power Dissipation (Max)1040 W
Supplier Device PackageT-MAX™ [B2]
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 20$ 35.14

Description

General part information

APT22F120 Series

N-Channel 1200 V 23A (Tc) 1040W (Tc) Through Hole T-MAX™ [B2]

Documents

Technical documentation and resources