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TO-252
Discrete Semiconductor Products

SQD50P08-28-T4_GE3

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TO-252
Discrete Semiconductor Products

SQD50P08-28-T4_GE3

Active

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSQD50P08-28-T4_GE3
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]145 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds6035 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)136 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs28 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2500$ 0.66
5000$ 0.62
12500$ 0.60

Description

General part information

SQD50 Series

P-Channel 80 V 48A (Tc) 136W (Tc) Surface Mount TO-252AA

Documents

Technical documentation and resources