SQD50 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 40V 50A TO252AA

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SQD50N04_4M5LT4GE3	2.5 V	20 V	130 nC	40 V	Surface Mount	-55 °C	175 ░C	136 W	MOSFET (Metal Oxide)	3.5 mOhm	5860 pF	50 A	N-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SQD50N04-5M6_T4GE3	3.5 V	20 V		40 V	Surface Mount	-55 °C	175 ░C	71 W	MOSFET (Metal Oxide)		4000 pF	50 A	N-Channel	TO-252AA	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	AEC-Q101	85 nC
Vishay General Semiconductor - Diodes Division SQD50P03-07_GE3	2.5 V	20 V		30 V	Surface Mount	-55 °C	175 ░C	136 W	MOSFET (Metal Oxide)		5490 pF	50 A	P-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			146 nC	7 mOhm
Vishay General Semiconductor - Diodes Division SQD50P08-28-T4_GE3	3.5 V	20 V	145 nC	80 V	Surface Mount	-55 °C	175 ░C	136 W	MOSFET (Metal Oxide)		6035 pF	48 A	P-Channel	TO-252AA	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	AEC-Q101		28 mOhm
Vishay General Semiconductor - Diodes Division SQD50P03-07-T4_GE3	2.5 V	20 V		30 V	Surface Mount	-55 °C	175 ░C	136 W	MOSFET (Metal Oxide)		5490 pF	50 A	P-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	AEC-Q101	146 nC	7 mOhm
Vishay General Semiconductor - Diodes Division SQD50N04-4M5L_GE3	2.5 V	20 V	130 nC	40 V	Surface Mount	-55 °C	175 ░C	136 W	MOSFET (Metal Oxide)	3.5 mOhm	5860 pF	50 A	N-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3
Vishay General Semiconductor - Diodes Division SQD50P04-13L_GE3	2.5 V	20 V	90 nC	40 V	Surface Mount	-55 °C	175 ░C	3 W 136 W	MOSFET (Metal Oxide)			50 A	P-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3				13 mOhm	3590 pF
Vishay General Semiconductor - Diodes Division SQD50N05-11L_GE3	2.5 V	20 V		50 V	Surface Mount	-55 °C	175 ░C	75 W	MOSFET (Metal Oxide)		2106 pF	50 A	N-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			52 nC	11 mOhm
Vishay General Semiconductor - Diodes Division SQD50N04-5M6_GE3	3.5 V	20 V		40 V	Surface Mount	-55 °C	175 ░C	71 W	MOSFET (Metal Oxide)		4000 pF	50 A	N-Channel	TO-252AA	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Automotive	AEC-Q101	85 nC
Vishay General Semiconductor - Diodes Division SQD50P04-09L_T4GE3	2.5 V	20 V		40 V	Surface Mount	-55 °C	175 ░C	136 W	MOSFET (Metal Oxide)		6675 pF	50 A	P-Channel	TO-252AA	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3			155 nC	9.4 mOhm