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Documents2N3441
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Documents2N3441
Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N3441 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 3 A |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 25 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-66-2, TO-213AA |
| Power - Max [Max] | 3 W |
| Qualification | MIL-PRF-19500/369 |
| Supplier Device Package | TO-66 (TO-213AA) |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 269.36 | |
Description
General part information
JANTXV2N3441-Transistor Series
This specification covers the performance requirements for NPN, silicon, power 2N3441 transistor. Three levels of product assurance are provided for each device type (JAN, JANTX and JANTXV) as specified in MIL-PRF-19500/369. The device package outlines are as follows: similar to TO-66 for all encapsulated device types.
Documents
Technical documentation and resources