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Integrated Circuits (ICs)

SM74101SD/NOPB

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Texas Instruments

3-A/7-A SINGLE CHANNEL GATE DRIVER WITH INPUT GROUND FOR SPLIT SUPPLY OPERATION

SDE06A
Integrated Circuits (ICs)

SM74101SD/NOPB

Active
Texas Instruments

3-A/7-A SINGLE CHANNEL GATE DRIVER WITH INPUT GROUND FOR SPLIT SUPPLY OPERATION

Technical Specifications

Parameters and characteristics for this part

SpecificationSM74101SD/NOPB
Channel TypeSingle
Current - Peak Output (Source, Sink) [custom]3 A
Current - Peak Output (Source, Sink) [custom]7 A
Driven ConfigurationLow-Side
Gate TypeN-Channel, P-Channel MOSFET
Input TypeNon-Inverting, Inverting
Logic Voltage - VIL, VIH [custom]2.3 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers1
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Rise / Fall Time (Typ) [custom]12 ns
Rise / Fall Time (Typ) [custom]14 ns
Supplier Device Package6-WSON (3x3)
Voltage - Supply [Max]14 V
Voltage - Supply [Min]3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.03
10$ 1.83
25$ 1.72
100$ 1.47
250$ 1.38
Digi-Reel® 1$ 2.03
10$ 1.83
25$ 1.72
100$ 1.47
250$ 1.38
Tape & Reel (TR) 1000$ 1.00
2000$ 0.93
5000$ 0.90
10000$ 0.86
Texas InstrumentsSMALL T&R 1$ 1.53
100$ 1.26
250$ 0.91
1000$ 0.68

Description

General part information

SM74101 Series

The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.