
SM74101 Series
3-A/7-A single channel gate driver with input ground for split supply operation
Manufacturer: Texas Instruments
Catalog
3-A/7-A single channel gate driver with input ground for split supply operation
Key Features
• Renewable Energy GradeCompound CMOS and Bipolar Outputs ReduceOutput Current Variation7A sink/3A Source CurrentFast Propagation Times (25 ns Typical)Fast Rise and Fall Times (14 ns/12 ns Rise/Fallwith 2 nF Load)Inverting and Non-Inverting Inputs Provide EitherConfiguration with a Single DeviceSupply Rail Under-Voltage Lockout ProtectionDedicated Input Ground (IN_REF) for Split Supplyor Single Supply OperationPower Enhanced 6-Pin WSON Package (3.0mm ×3.0mm)Output Swings from VCCto VEEwhich can beNegative Relative to Input GroundRenewable Energy GradeCompound CMOS and Bipolar Outputs ReduceOutput Current Variation7A sink/3A Source CurrentFast Propagation Times (25 ns Typical)Fast Rise and Fall Times (14 ns/12 ns Rise/Fallwith 2 nF Load)Inverting and Non-Inverting Inputs Provide EitherConfiguration with a Single DeviceSupply Rail Under-Voltage Lockout ProtectionDedicated Input Ground (IN_REF) for Split Supplyor Single Supply OperationPower Enhanced 6-Pin WSON Package (3.0mm ×3.0mm)Output Swings from VCCto VEEwhich can beNegative Relative to Input Ground
Description
AI
The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
The SM74101 MOSFET gate driver provides high peak gate drive current in the tiny WSON-6 package (SOT23 equivalent footprint), with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The SM74101 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.