Discrete Semiconductor Products
RS7E200BGTB1
ActiveRohm Semiconductor
MOSFET, N-CHANNEL, 30V, 390A, DFN5060 ROHS COMPLIANT: YES
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Discrete Semiconductor Products
RS7E200BGTB1
ActiveRohm Semiconductor
MOSFET, N-CHANNEL, 30V, 390A, DFN5060 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RS7E200BGTB1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 390 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 135 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 9500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 3 W |
| Power Dissipation (Max) | 180 W |
| Rds On (Max) @ Id, Vgs | 0.67 mOhm |
| Supplier Device Package | DFN5060-8S |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RS7E200BG Series
RS7E200BG is a power MOSFET with low-on resistance and high power package, suitable for switching, motor drives, and DC/DC converter.
Documents
Technical documentation and resources