Discrete Semiconductor Products

SIHLR120-GE3

LTB

MOSFET N-CH 100V 7.7A DPAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 7.7A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHLR120-GE3

Current - Continuous Drain (Id) @ 25°C	7.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V, 4 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs	270 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHLR120-GE3	2 V	4 V 5 V	100 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	TO-252AA	12 nC	DPAK (2 Leads + Tab) SC-63 TO-252-3	270 mOhm	2.5 W 42 W	7.7 A	N-Channel	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

Technical documentation and resources