Discrete Semiconductor Products

SIHLR120-GE3

LTB

MOSFET N-CH 100V 7.7A DPAK

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Discrete Semiconductor Products

LTB

MOSFET N-CH 100V 7.7A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHLR120-GE3

Current - Continuous Drain (Id) (Tc)	7.7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	490 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	2.5 W, 42 W
Rds On (Max)	270 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2 V

Part	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Vgs (Max)	Gate Charge (Max)	Package Name
Vishay Dale SIHLR120-GE3	MOSFET (Metal Oxide)	2.5 W 42 W	490 pF	Surface Mount	7.7 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	4 V	N-Channel	-55 °C	150 °C	270 mOhm	100 V	2 V	10 V	12 nC	TO-252AA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.28	1m+
	Tape & Reel (TR)	3000	$ 0.27	1m+
		6000	$ 0.26
		9000	$ 0.24
		30000	$ 0.24

3D models and CAD resources for this part

General part information

N-Channel 100 V 7.7A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

Technical documentation and resources