SIHLR120 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 7.7A DPAK
| Part | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2 V | 4 V 5 V | 100 V | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | TO-252AA | 12 nC | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 270 mOhm | 2.5 W 42 W | 7.7 A | N-Channel | 10 V |