SI5485DU-T1-GE3

Obsolete

MOSFET P-CH 20V 12A PPAK

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 12A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5485DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	31 W, 3.1 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5485DU-T1-GE3	2.5 V 4.5 V	-55 °C	150 °C	Surface Mount	PowerPAK® ChipFET™ Single	12 A	MOSFET (Metal Oxide)	20 V	42 nC	P-Channel	3.1 W 31 W	PowerPAK® ChipFET™ Single	25 mOhm	12 V	1.5 V	1100 pF
Vishay General Semiconductor - Diodes Division SI5485DU-T1-E3	2.5 V 4.5 V	-55 °C	150 °C	Surface Mount	PowerPAK® ChipFET™ Single	12 A	MOSFET (Metal Oxide)	20 V	42 nC	P-Channel	3.1 W 31 W	PowerPAK® ChipFET™ Single	25 mOhm	12 V	1.5 V	1100 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 12A (Tc) 3.1W (Ta), 31W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources

No documents available