SI5485 Series

Catalog

MOSFET P-CH 20V 12A PPAK

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI5485DU-T1-GE3	2.5 V 4.5 V	-55 °C	150 °C	Surface Mount	PowerPAK® ChipFET™ Single	12 A	MOSFET (Metal Oxide)	20 V	42 nC	P-Channel	3.1 W 31 W	PowerPAK® ChipFET™ Single	25 mOhm	12 V	1.5 V	1100 pF
Vishay General Semiconductor - Diodes Division SI5485DU-T1-E3	2.5 V 4.5 V	-55 °C	150 °C	Surface Mount	PowerPAK® ChipFET™ Single	12 A	MOSFET (Metal Oxide)	20 V	42 nC	P-Channel	3.1 W 31 W	PowerPAK® ChipFET™ Single	25 mOhm	12 V	1.5 V	1100 pF