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TO-39
Discrete Semiconductor Products

2N3743

Active
Microchip Technology

300 V POWER BJT TO-39 ROHS COMPLIANT: YES

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TO-39
Discrete Semiconductor Products

2N3743

Active
Microchip Technology

300 V POWER BJT TO-39 ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3743
Current - Collector (Ic) (Max) [Max]200 mA
Current - Collector Cutoff (Max) [Max]250 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50 hFE
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
Supplier Device PackageTO-39
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic1.2 V
Voltage - Collector Emitter Breakdown (Max)300 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 15.00
Microchip DirectN/A 1$ 16.16
NewarkEach 100$ 15.00
500$ 14.43

Description

General part information

2N3743-Transistor Series

This specification covers the performance requirements for PNP, silicon, high-voltage 2N3743, 2N4930 and 2N4931 transistor. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/397. Two levels of product assurance (JANHC and JANKC) for die are provided for each unencapsulated device. The device package outlines are as follows: TO-39 , and surfacemount U4 package for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/397.

Documents

Technical documentation and resources