Specification	FDMA7628

Current - Continuous Drain (Id) @ 25°C	9.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	17.5 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	14.5 mOhm
Supplier Device Package	6-MicroFET (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

FDMA7628 Series

Single N-Channel 1.5 V Specified PowerTrench® MOSFET 20V, 9.4A, 14.5mΩ

Part	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	FET Type	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor FDMA7628	Surface Mount	17.5 nC	14.5 mOhm	N-Channel	MOSFET (Metal Oxide)	8 V	9.4 A	1680 pF	1.9 W	1.5 V 4.5 V	20 V	6-MicroFET (2x2)	1 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	962	$ 0.31

Description

General part information

FDMA7628 Series

This Single N-Channel MOSFET has been designed using ON Semiconductor Semiconductor's advanced Power Trench®process to optimize the rDS(ON)@ VGS= 1.5 V on special MicroFET leadframe.