Specification	NDP6020P

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	50 mOhm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

NDP6020P Series

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mΩ

Part	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor NDP6020P	1 V	175 ░C	-65 °C	Through Hole	TO-220-3	4.5 V	TO-220-3	8 V	60 W	20 V	35 nC	MOSFET (Metal Oxide)	24 A	P-Channel	50 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NDP6020P Series

These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.