NDP6020P Series

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mΩ

Catalog

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mΩ

Part	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs
ON Semiconductor NDP6020P	1 V	175 ░C	-65 °C	Through Hole	TO-220-3	4.5 V	TO-220-3	8 V	60 W	20 V	35 nC	MOSFET (Metal Oxide)	24 A	P-Channel	50 mOhm

Catalog

P-Channel Logic Level Enhancement Mode Field Effect Transistor -20V, -24A, 50mΩ

Key Features

-24 A, -20 VRDS(ON)= 0.05 Ω @ VGS= -4.5 VRDS(ON)= 0.07 Ω @ VGS= -2.7 VRDS(ON)= 0.075 Ω @ VGS= -2.5 V.

• Critical DC electrical parameters specified at elevated temperature.

• Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.

• 175°C maximum junction temperature rating.

• High density cell design for extremely low RDS(ON).

• TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

Description

These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.