FDS6670A
ActiveSINGLE N-CHANNEL LOGIC LEVEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 13A, 8MΩ
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FDS6670A
ActiveSINGLE N-CHANNEL LOGIC LEVEL POWERTRENCH<SUP>®</SUP> MOSFET 30V, 13A, 8MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FDS6670A |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 30 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2220 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 8 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 704 | $ 0.43 | |
| 704 | $ 0.43 | |||
| 779 | $ 0.39 | |||
| 779 | $ 0.39 | |||
| Cut Tape (CT) | 1 | $ 1.31 | ||
| 1 | $ 1.31 | |||
| 10 | $ 0.82 | |||
| 10 | $ 0.82 | |||
| 100 | $ 0.55 | |||
| 100 | $ 0.55 | |||
| 500 | $ 0.43 | |||
| 500 | $ 0.43 | |||
| 1000 | $ 0.39 | |||
| 1000 | $ 0.39 | |||
| Digi-Reel® | 1 | $ 1.31 | ||
| 1 | $ 1.31 | |||
| 10 | $ 0.82 | |||
| 10 | $ 0.82 | |||
| 100 | $ 0.55 | |||
| 100 | $ 0.55 | |||
| 500 | $ 0.43 | |||
| 500 | $ 0.43 | |||
| 1000 | $ 0.39 | |||
| 1000 | $ 0.39 | |||
| Tape & Reel (TR) | 2500 | $ 0.35 | ||
| 2500 | $ 0.35 | |||
| 5000 | $ 0.32 | |||
| 5000 | $ 0.32 | |||
| 7500 | $ 0.31 | |||
| 7500 | $ 0.31 | |||
| 12500 | $ 0.30 | |||
| 12500 | $ 0.30 | |||
| Newark | Each (Supplied on Full Reel) | 2500 | $ 0.36 | |
| 5000 | $ 0.35 | |||
| 10000 | $ 0.34 | |||
| 15000 | $ 0.34 | |||
| ON Semiconductor | N/A | 1 | $ 0.32 | |
Description
General part information
FDS6670A Series
This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Documents
Technical documentation and resources