Specification	KSD363YTU

Frequency - Transition	10 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

KSD363 Series

NPN Epitaxial Silicon Transistor

Part	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Transistor Type	Mounting Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
ON Semiconductor KSD363YTU	150 °C	1 V	TO-220-3	NPN	Through Hole	10 MHz	120 V	TO-220-3	40 W
ON Semiconductor KSD363R	150 °C	1 V	TO-220-3	NPN	Through Hole	10 MHz	120 V	TO-220-3	40 W	40

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources