Catalog
NPN Epitaxial Silicon Transistor
Key Features
• Collector-Base Voltage: VCBO= 300 V
• Collector Current: IC= 6 A
• Collector Dissipation: PC= 40 W (TC=25°C)B/W TV Horizontal Deflection Output
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NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
| Part | Operating Temperature | Vce Saturation (Max) @ Ib, Ic | Supplier Device Package | Transistor Type | Mounting Type | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Power - Max [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] |
|---|---|---|---|---|---|---|---|---|---|---|
 ON Semiconductor | 150 °C | 1 V | TO-220-3 | NPN | Through Hole | 10 MHz | 120 V | TO-220-3 | 40 W | |
ON Semiconductor | 150 °C | 1 V | TO-220-3 | NPN | Through Hole | 10 MHz | 120 V | TO-220-3 | 40 W | 40 |