
Discrete Semiconductor Products
NVMFS6B03NLT1G
ObsoleteON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 100V, 145A, 4MΩ
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Discrete Semiconductor Products
NVMFS6B03NLT1G
ObsoleteON Semiconductor
SINGLE N-CHANNEL POWER MOSFET 100V, 145A, 4MΩ
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | NVMFS6B03NLT1G |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 145 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 5320 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 4 mOhm |
| Supplier Device Package | 5-DFN (5x6) |
| Supplier Device Package | 8-SOFL |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
NVMFS6H801NL Series
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Documents
Technical documentation and resources