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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NVMFS6H801NLT1G

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ON Semiconductor

MOSFET - POWER, SINGLE N-CHANNEL, 80 V, 2.7 MΩ, 160 A - NVMFS6H801NL

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5-DFN, 8-SO Flat Lead
Discrete Semiconductor Products

NVMFS6H801NLT1G

Active
ON Semiconductor

MOSFET - POWER, SINGLE N-CHANNEL, 80 V, 2.7 MΩ, 160 A - NVMFS6H801NL

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMFS6H801NLT1G
Current - Continuous Drain (Id) @ 25°C160 A, 24 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]90 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds5126 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN, 5 Leads
Power Dissipation (Max)3.8 W, 167 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs2.7 mOhm
Supplier Device Package5-DFN (5x6)
Supplier Device Package8-SOFL
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.27
10$ 2.13
100$ 1.48
500$ 1.20
Digi-Reel® 1$ 3.27
10$ 2.13
100$ 1.48
500$ 1.20
Tape & Reel (TR) 1500$ 1.07
3000$ 1.06
NewarkEach 1000$ 1.42
2500$ 1.14
5000$ 1.11
ON SemiconductorN/A 1$ 0.98

Description

General part information

NVMFS6H801NL Series

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.