Discrete Semiconductor Products

SIHP100N60E-GE3

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MOSFET N-CH 600V 30A TO220AB

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 30A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP100N60E-GE3

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	1851 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	100 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHP100N60E-GE3	5 V	10 V	TO-220AB	50 nC	30 A	208 W	Through Hole	MOSFET (Metal Oxide)	600 V	TO-220-3	100 mOhm	N-Channel	-55 °C	150 °C	1851 pF	30 V

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General part information

N-Channel 600 V 30A (Tc) 208W (Tc) Through Hole TO-220AB

Technical documentation and resources