SIHP100 Series

Catalog

MOSFET N-CH 600V 30A TO220AB

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHP100N60E-GE3	5 V	10 V	TO-220AB	50 nC	30 A	208 W	Through Hole	MOSFET (Metal Oxide)	600 V	TO-220-3	100 mOhm	N-Channel	-55 °C	150 °C	1851 pF	30 V