Discrete Semiconductor Products

2N6650

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80V PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

80V PNP POWER BJT THT TO-3 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	2N6650

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-65 °C
Package / Case	TO-3, TO-204AA
Power - Max [Max]	5 W
Supplier Device Package	TO-204AA (TO-3)
Transistor Type	PNP - Darlington
Vce Saturation (Max) @ Ib, Ic [Max]	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Transistor Type	Current - Collector Cutoff (Max) [Max]	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Vce Saturation (Max) @ Ib, Ic [Max]	Supplier Device Package
Microchip Technology 2N6650	80 V	5 W	1000 hFE	Through Hole	PNP - Darlington	1 mA	TO-204AA TO-3	175 ░C	-65 °C	3 V	TO-204AA (TO-3)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 96.12
Newark	Each	100	$ 96.12
		500	$ 92.43

General part information

Bipolar (BJT) Transistor PNP - Darlington 80 V 10 A 5 W Through Hole TO-204AA (TO-3)

Technical documentation and resources