Specification	EMH2308-TL-H

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	1.8 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	4 nC
Input Capacitance (Ciss) (Max) @ Vds	320 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1 W
Rds On (Max) @ Id, Vgs	85 mOhm
Supplier Device Package	8-EMH
Technology	MOSFET (Metal Oxide)

EMH2308 Series

P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8

Part	Supplier Device Package	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Feature	FET Feature	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor EMH2308-TL-H	8-EMH	2 P-Channel	Surface Mount	320 pF	85 mOhm	20 V	1.8 V	Logic Level Gate	MOSFET (Metal Oxide)	1 W	4 nC	150 °C	3 A
ON Semiconductor EMH2308-TL-E	8-EMH	2 P-Channel	Surface Mount	320 pF	85 mOhm	20 V		Logic Level Gate	MOSFET (Metal Oxide)	1.2 W	4 nC		3 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

EMH2308 is P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8 for General-Purpose Switching Device Applications.