EMH2308 Series

P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8

Catalog

P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8

Part	Supplier Device Package	Configuration	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	FET Feature	FET Feature	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor EMH2308-TL-H	8-EMH	2 P-Channel	Surface Mount	320 pF	85 mOhm	20 V	1.8 V	Logic Level Gate	MOSFET (Metal Oxide)	1 W	4 nC	150 °C	3 A
ON Semiconductor EMH2308-TL-E	8-EMH	2 P-Channel	Surface Mount	320 pF	85 mOhm	20 V		Logic Level Gate	MOSFET (Metal Oxide)	1.2 W	4 nC		3 A

P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8

• low ON-resistance and ultrahigh-speed switching, thereby high-density mounting.

• 1.8 V drive

• Halogen Free compliance

• Protection diode in

EMH2308 is P-Channel Power MOSFET, -20 V, -3 A, 85 mΩ, Dual EMH8 for General-Purpose Switching Device Applications.