Discrete Semiconductor Products

NTMD6P02R2G

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POWER MOSFET, P CHANNEL, 20 V, 7.8 A, 0.027 OHM, SOIC, SURFACE MOUNT

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Discrete Semiconductor Products

Active

POWER MOSFET, P CHANNEL, 20 V, 7.8 A, 0.027 OHM, SOIC, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	NTMD6P02R2G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.8 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	750 mW
Rds On (Max) @ Id, Vgs	33 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8

Part	Technology	Supplier Device Package	FET Feature	Configuration	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMD6P02R2G	MOSFET (Metal Oxide)	8-SOIC	Logic Level Gate	2 P-Channel	1.2 V	8-SOIC	3.9 mm	0.154 in	750 mW	33 mOhm	1700 pF	-55 °C	150 °C	20 V	35 nC	Surface Mount	4.8 A
ON Semiconductor NTMD6N03R2G	MOSFET (Metal Oxide)	8-SOIC	Logic Level Gate	2 N-Channel (Dual)	2.5 V	8-SOIC	3.9 mm	0.154 in	1.29 W	32 mOhm	950 pF	-55 °C	150 °C	30 V	30 nC	Surface Mount	6 A

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General part information

Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8

Technical documentation and resources