NTMD6N03 Series

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8

Catalog

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8

Part	Technology	Supplier Device Package	FET Feature	Configuration	Vgs(th) (Max) @ Id	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C
ON Semiconductor NTMD6P02R2G	MOSFET (Metal Oxide)	8-SOIC	Logic Level Gate	2 P-Channel	1.2 V	8-SOIC	3.9 mm	0.154 in	750 mW	33 mOhm	1700 pF	-55 °C	150 °C	20 V	35 nC	Surface Mount	4.8 A
ON Semiconductor NTMD6N03R2G	MOSFET (Metal Oxide)	8-SOIC	Logic Level Gate	2 N-Channel (Dual)	2.5 V	8-SOIC	3.9 mm	0.154 in	1.29 W	32 mOhm	950 pF	-55 °C	150 °C	30 V	30 nC	Surface Mount	6 A

Power MOSFET 30V 6A 32 mOhm Dual N-Channel SO-8

• Designed for use in low voltage, high speed switching applications

• Ultra Low Rds(on)Provides Higher Efficiency and Extends Battery Life- Rds(on)= 0.024 Ω, VGS= 10 V (Typ)- Rds(on)= 0.030 Ω, VGS= 4.5 V (Typ)

• Miniature SO-8 Surface Mount Package Saves Board Space

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

• RoHS Compliant

Power MOSFET 30 V, 6 A, Dual N-Channel SOIC-8