Discrete Semiconductor Products

SIHP690N60E-GE3

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POWER MOSFET, N CHANNEL, 600 V, 6.4 A, 0.6 OHM, TO-220AB, THROUGH HOLE

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Discrete Semiconductor Products

Active

POWER MOSFET, N CHANNEL, 600 V, 6.4 A, 0.6 OHM, TO-220AB, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP690N60E-GE3

Current - Continuous Drain (Id) @ 25°C	6.4 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	347 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	62.5 W
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Package / Case
Vishay General Semiconductor - Diodes Division SIHP690N60E-GE3	5 V	-55 °C	150 °C	TO-220AB	700 mOhm	62.5 W	12 nC	MOSFET (Metal Oxide)	600 V	N-Channel	Through Hole	30 V	347 pF	10 V	6.4 A	TO-220-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 6.4A (Tc) 62.5W (Tc) Through Hole TO-220AB

Technical documentation and resources